| Ident. | Authors (with country if any) | Title |
|---|
| 000010 |
| The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasers |
| 000190 |
| Quantum dot diode lasers for optical communication systems |
| 000219 |
| A 1.33 μm InAs/GaAs quantum dot laser with a 46 cm-1 modal gain |
| 000241 |
| MBE-grown metamorphic lasers for applications at telecom wavelengths |
| 000326 |
| Comparative study of GaAs-based 1.5 micron-range InAs/InGaAs and InAs/InAlAs self-assembled quantum dots |
| 000331 |
| 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance |
| 000334 |
| Ultrahigh gain and non-radiative recombination channels in 1.5 μm range metamorphic InAs-InGaAs quantum dot lasers on GaAs substrates |
| 000348 |
| QD lasers : Physics and applications |
| 000367 |
| Long-wavelength lasers based on metamorphic quantum dots |
| 000405 |
| Luminescence of Stepped Quantum Wells in GaAs/GaAlAs and InGaAs/GaAs/GaAlAs Structures |
| 000514 |
| Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29 μm |
| 000570 |
| Complete suppression of filamentation and superior beam quality in quantum-dot lasers |
| 000611 |
| Recent advances in long wavelength GaAs-based quantum dot lasers |
| 000623 |
| Optical spin orientation under inter- and intra-subband transitions in QWs |
| 000636 |
| MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates |
| 000640 |
| Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells |
| 000654 |
| InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain |
| 000668 |
| Formation specifity of InAs/GaAs submonolayer superlattice |
| 000708 |
| Spectrotemporal response of 1.3 μm quantum-dot lasers |
| 000816 |
| Long-wavelength quantum-dot lasers |
| 000867 |
| Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-μm-wavelength at room temperature |
| 000895 |
| 1.3 μm Vertical Microcavities with InAs/InGaAs Quantum Dots and Devices Based on Them |
| 000946 |
| Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots |
| 000962 |
| Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells |
| 000980 |
| Large spectral splitting of TE and TM components of QDs in a microcavity |
| 000985 |
| InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 μm wavelength range |
| 000991 |
| Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation |
| 000A16 |
| 1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots |
| 000A17 |
| 1.3 μm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices |
| 000A18 |
| 1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy |
| 000A21 |
| Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors |
| 000A26 |
| Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm |
| 000A84 |
| Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3 μm Wavelength Range |
| 000A85 |
| Power Conversion Efficiency of Quantum Dot Laser Diodes |
| 000A96 |
| Recombination Emission from InAs Quantum Dots Grown on Vicinal GaAs Surfaces |
| 000B12 |
| Mechanisms of InGaAlAs Solid Solution Decomposition Stimulated by InAs Quantum Dots |
| 000B29 |
| A Spatially Single-Mode Laser for a Range of 1.25-1.28 μm on the Basis of InAs Quantum Dots on a GaAs Substrate |
| 000B80 |
| InGaAs-GaAs quantum dots for application in long wavelength (1.3 μm) resonant vertical cavity enhanced devices : Special issue papers |
| 000C10 |
| 3.5 W continuous wave operation from quantum dot laser |
| 000C12 |
| 0.94 μm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots |
| 000C15 |
| Optical anisotropy in vertically coupled quantum dots |
| 000C34 |
| Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm |
| 000C45 |
| Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates |
| 000C56 |
| Heteroepitaxial growth of InAs on Si: a new type of quantum dot |
| 000C58 |
| Gain characteristics of quantum-dot injection lasers |
| 000C65 |
| Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands |
| 000C66 |
| Lasing at a wavelength close to 1.3 μm in InAs quantum-dot structures |
| 000C92 |
| InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm |
| 000C97 |
| InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 μm |
| 000D09 |
| Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host |
| 000D11 |
| Optical properties of InAs quantum dots in a Si matrix |
| 000D34 |
| Intrinsic optical confinement and lasing in InAs-AlGaAs submonolayer superlattices |
| 000D55 |
| Self-organized InAs quantum dots in a silicon matrix |
| 000D73 |
| Molecular beam epitaxy (MBE) growth of composite (In, Al)As/(In, Ga)As vertically coupled quantum dots and their application in injection lasers |
| 000D80 |
| Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition : Special issue papers on quantum dots |
| 000E06 |
| Control of the emission wavelength of self-organized InGaAs quantum dots : main achievements and present status |
| 000E18 |
| 1.75 μm emission from self-organized InAs quantum dots on GaAs |
| 000E73 |
| High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser |
| 000F07 |
| Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates |
| 000F31 |
| Optical properties of InAlAs quantum dots in an AlGaAs matrix |
| 000F37 |
| Lateral association of vertically-coupled quantum dots |
| 000F43 |
| Injection lasers based on InGaAs quantum dots in an AlGaAs matrix |
| 000F52 |
| Formation of InAs quantum dots on a silicon (100) surface |
| 001005 |
| Quantum-dot lasers: Principal components of the threshold current density |
| 001032 |
| Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix |
| 001034 |
| Properties of strained (In, Ga, Al)As lasers with laterally modulated active region |
| 001037 |
| The properties of low-threshold heterolasers with clusters of quantum dots |
| 001044 |
| Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix |
| 001060 |
| Thermal stability of vertically coupled InAs-GaAs quantum dot arrays |
| 001062 |
| Modulation of a quantum well potential by a quantum-dot array |
| 001068 |
| Vertically coupled quantum dot lasers: First device oriented structures with high internal quantum efficiency |
| 001095 |
| Radiation characteristics of injection lasers based on vertically coupled quantum dots |
| 001139 |
| Structural and optical properties of InAs-GaAs quantum dots subjected to high temperature annealing |
| 001146 |
| Photoluminescence of arrays of vertically coupled, stressed InAs quantum dots in a GaAs (100) matrix |
| 001150 |
| Identification of radiative recombination channels in quantum dot structures |
| 001153 |
| Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth |
| 001158 |
| Formation of vertically aligned arrays of strained InAs quantum dots in a GaAs(100) matrix |
| 001161 |
| Optical emission range of structures with strained InAs quantum dots in GaAs |
| 001210 |
| An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix |
| 001212 |
| Multiphonon-relaxation processes in self-organized InAs/GaAs quantum dots |
| 001314 |
| Ultranarrow Luminescence Lines from Single Quantum Dots |
